ALD114913SAL

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ALD114913SAL

Manufacturer's Part No.
ALD114913SAL
Manufacturer
Advanced Linear Devices, Inc.
Categories
Discrete Semiconductor Products
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Series
EPAD®
Description
MOSFET 2N-CH 10.6V 8SOIC
Datasheet
pdfALD114913SAL.pdf
Quantity
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Payment
payment
Delivery
Delivery
Available: 8
Refrence Price (In US Dollars)
Qty Unit Price Ext.Price
1+$3.12524$3.13
10+$2.81272$28.13
30+$2.18767$65.63
100+$1.79701$179.70
500+$1.71888$859.44
1000+$1.56262$1562.62
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PART PICTURE & X-RAY IMAGES

Product Parameter

ManufacturerAdvanced Linear Devices, Inc.
CategoriesDiscrete Semiconductor Products
SeriesEPAD®
FET Type2 N-Channel (Dual) Matched Pair
Published2005
FET FeatureDepletion Mode
Power - Max500mW
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154, 3.90mm Width)
Input Capacitance2.5pF
Vgs(th) (Max) @ Id1.26V @ 1μA
Element ConfigurationDual
Operating Temperature0°C~70°C TJ
Supplier Device Package8-SOIC
Min Operating Temperature0°C
Gate to Source Voltage (Vgs)10.6V
Drain to Source Voltage (Vdss)10.6V
Input Capacitance (Ciss) (Max) @ Vds2.5pF @ 5V
Manufacturer's Part No.ALD114913SAL
Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
MountSurface Mount
PackagingTube
Rds On Max500 Ω
Part StatusActive
REACH StatusREACH Unaffected
Number of Pins8
Factory Lead Time8 Weeks
Power Dissipation500mW
Turn-Off Delay Time10 ns
Max Power Dissipation500mW
Rds On (Max) @ Id, Vgs500Ohm @ 2.7V
Max Operating Temperature70°C
Drain to Source Resistance500Ohm
Continuous Drain Current (ID)3mA
Drain to Source Breakdown Voltage10V
Current - Continuous Drain (Id) @ 25°C12mA 3mA

Environmental & Export Classifications

ECCNEAR99
RoHS StatusROHS3 Compliant
HTSUS8541.21.0095
Moisture Sensitivity Level (MSL)1 (Unlimited)

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